◆ANNEAL◆ Wafer Annealing Equipment
Max 1000℃, maximum 3 systems for MFC, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)
High-temperature processing up to 1000°C is possible with a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of three systems, allowing for firing operations at precisely adjusted process gas pressures (with the APC automatic process control system option). Additionally, there are many options available, including a front viewport, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature. - Halogen lamp heater: Max 500°C - C/C composite heater: Max 1000°C (only in vacuum or inert gas) - SiC coating heater: Max 1000°C (in vacuum, inert gas, O2)
- Company：テルモセラ・ジャパン 本社
- Price：Other
